| 摘要 |
PURPOSE:To improve the lithography forming speed of an LSI which includes many repetition patterns by exposing repetition patterns by an aperture exclusive for said patterns. CONSTITUTION:A main aperture 31 for generating a forming beam of a basic figure shape, such as a rectangle or a triangle in combination with a second aperture mask 18, and subapertures 32a-32d for generating one or more special shape forming beam having a feature in a desired pattern are formed on a first aperture mask 15. An aperture selecting deflector 14 selects the irradiating position of an electron beam to the main aperture or the subaperture. Accordingly, the subaperture is selected by the deflector 14 to obtain a forming beam having a special shape having a feature in a pattern to be exposed. Thus, an LSI having many repetition patterns can be efficiently exposed. |
