| 摘要 |
PURPOSE:To enable a material to be etched at high selection ratio while restraining the side etching from occuring by a method wherein the temperature of etched material is specified before a solid surface is etched in a gas plasma atmosphere. CONSTITUTION:When the temperature whereat the gas pressure value of a gas led into a plasma processing chamber at the plasma producing time is equalized with the stream pressure value of gas at the temperature of a material to be etched cooled down to low temperature is assumed as T1, while the temperature whereat the negative DC bias component produced in case the etched material is impressed with high-frequency voltage declines rapidly due to the low temperature cooling down is assumed as T2, the temperature T of etched material is set up to be controlled within the range of T1<=T<=T2. In other words, when T does not exceed T2, extremely effective etching process can be performed subject to no damage due to overetching or no insufficient etching at the corners of step even if there is any big step in the etched material but when T does not exceed T1, plasma gas is separated on the etched material, thses making the etching process impossible to be performed.
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