| 摘要 |
PURPOSE:To remove any contaminant from a specimen with no damage of the specimen by a method wherein a substrate to be processed immediately after irradiation with electron beams or ion beams is surface-processed in oxygen plasma. CONSTITUTION:A reaction vessel 1 containing a contaminated specimen 2 is vacuumized by a vacuum pump 9 and then a valve 3 is opened to lead oxygen gas into the reaction vessel 1. The flow rate of oxygen gas is regulated by a flow meter 4. Next, the output from an oscillator 8 is matched with an electrode 6 by a tuning circuit 7 to generate oxygen plasma in the vessel 1. By means of said oxygen plasma processing, the carbon as the main component of contaminant reacts with the oxygen to be vaporized as carbon dioxide from the surface of specimen. Through these procedures, a semiconductor can be actuated normally subjected to no change such as detrioration in performance.
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