| 摘要 |
PURPOSE:To eliminate the possibility of generation of contamination and degeneration on the surface of amorphous silicon caused by resist as well as to contrive improvement in the reliability of the title semiconductor device by a method wherein amorphous silicon is formed at a temperature of 150 deg.C or below by performing a plasma CVD method using microwave electronic cyclotron resonance absorption. CONSTITUTION:On the glass substrate 11 on which Cr and the like is formed as a lower electrode 12, there is no resist at the part 14 where amorphous silicon is left and a resist pattern is formed. An amorphous silicon 15 of about 1 mum, for example, is formed by performing a mu-wave ECR plasma CVD method. As said silicon 15 can be formed at room temperature, an amorphous silicon 15 can be formed on the ordinary resist material. The pattern of the amorphous silicon 15 can be formed by performing a lift-off method on the resist pattern 13. Then, a transparent conductive film 16 of oxide such as ITO is formed, and an amorphous silicon photodiode is formed. Excellent characteristics can be obtained by performing a heat treatment at 200-300 deg.C as occasion demands.
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