| 摘要 |
PURPOSE:To alleviate the stress present on the interface between a substrate and a silicon thin film by a method wherein an amorphous silicon thin film and a crystalline silicon thin film are deposited alternately on a substrate. CONSTITUTION:The silicon thin film 2 on the substrate 1 such as a quartz glass substrate and the like is formed into a four-layer structure, layers 3 and 5 are formed of amorphous silicon, and layers 4 and 6 are formed of crystalline silicon. These silicon thin films are formed using an LPCVD method. When the multilayer structure such as above-mentioned is used, a leak current can be made small. Also, as the stress in the polycrystalline layers 4 and 6 can be alleviated slowly by the amorphous layers 3 and 5, the value of an ON- current can be made larger than the characteristics heretofore in use. The layers are formed into an amorphous state or a crystalline state by having a non-crystalline state, by changing the substrate temperature while a film is being deposited, by using diluted gas, and also by changing the degree of vacuum state.
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