| 摘要 |
PURPOSE:To increase energy difference between conduction bands by providing a channel layer of an undoped III-V compound semiconductor and a carrier supply layer of an impurity-doped II-VI compound semiconductor. CONSTITUTION:A channel layer 2 consisting of an un-doped III-V compound semiconductor formed onto a substrate 1 and a carrier supply layer 3, which is shaped onto the channel layer 2, electron affinity of which is smaller than the channel layer, an energy-band-gap of which is larger than the channel layer and which is composed of an impurity-doped II-VI compound semiconductor, are formed. Consequently, since energy difference between the conduction bands of the channel layer 2 and the carrier supply layer 3 is increased extremely, carriers in a two-dimensional carrier-gas layer 7 are not moved to the carrier supply layer 3 even under the state in which high voltage is applied between source-drain, thus allowing stable operation. Carrier-gas concentration in the two-dimensional carrier-gas layer 7 is augmented, thus extracting large currents.
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