| 摘要 |
PURPOSE:To utilize a semiconductor element having sufficiently enough electrostatic resistance by applying a voltage of maximum rated value or higher to the element formed on a semiconductor wafer before finely dividing a pellet to measure the electrostatic resistance, and discriminating the propriety of the element. CONSTITUTION:The charging voltage of a capacitor C is set to the maximum rated value or higher of an element formed on a semiconductor wafer 4, and when a switch S is switched to a probe 5 side, a voltage of a power source E is applied momentarily to an element on the wafer through a probe 5 to discharge the capacitor C. When the charging and discharging of the capacitor C are repeated approx. 10 times at each element for all the elements of the wafer, the element which is easily electrostatically broken down is broken in advance. Accordingly, the measurement of the electrostatic resistance is executed before characteristic check, the element which is electrostatically broken down at this stage is marked to be able to be distinguished.
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