| 摘要 |
PURPOSE:To form a thin film having low localization level density on the interface with high reproducibility by specifying the initial rate of fluctuation of DC voltage induced in an electrode at the time of generation of plasma and by controlling conditions during glow discharge. CONSTITUTION:DC voltage generated in an electrode 2 connected to a high frequency power source 1 is monitored with a DC voltmenter 3. A substrate 5 is placed on an earthed electrode 4 confronting the electrode 2 and a reactor 6 is earthed. A gas is introduced into the reactor 6 for plasma CVD and glow discharge is started. At this time, the initial rate of increase or decrease of DC voltage, against earth, induced in the electrode 2 at the time of generation of plasma capable of forming a thin film on the substrate 5 is made as high as >=0.5V/sec and conditions during the glow discharge are controlled so as to rapidly attain a stationary state. A stepped fine interface can be formed and a thin film hardly affected by the interface and having desired characteristics can be formed. |
