| 摘要 |
PURPOSE:To eliminate reflection at the boundary between zinc selenide and a transparent electrode and to enable emitted light to be taken out efficiently, by providing the transparent electrode on a zinc selenide film having no additives and providing the transparent electrode with a refractive index intermediate between those of zinc selenide and of water. CONSTITUTION:Crystals of ZnSe are grown on a clean surface of GaAs by the molecular beam epitaxy. After an about 0.3 mum thick chlorine added ZnSe film 2 is deposited on the GaAs substrate 1 as an N<+> type contact layer, the temperature of ZnCl2 is decreased so that a chlorine added ZnSe film 3 having characteristics suitable for emitting light is deposited. A ZnSe film containing no additive provides a highly resistive insulation layer 4. In order to achieve a light emission threshold value of 20 V or below, the insulation layer 4 is required to have a thickness of 0.1 mum or below. The GaAs substrate 1 is then irradiated with electron beams and heated. ITO is thereby vaporized and a transparent electrode 5 is provided on the insulation film 4. Leads 6 and 7 are connected to the GaAs substrate 1 and the transparent electrode 5, respectively, in ohmic contact. Thus, a light emitting diode from which emitted light can be taken out with an improved efficiency can be obtained. |
