发明名称 VERFAHREN UND VORRICHTUNG ZUM HERSTELLEN VON AMORPHEN HALBLEITERVORRICHTUNGEN
摘要 An active zone between a lower electrode deposited on a substrate and an upper electrode constitutes a portion of an amorphous semiconducting layer and is defined either by the dimensions of the upper electrode or by a window formed in an insulating layer. The method of fabrication consists in forming the two electrodes and the two active and insulating layers, the active layer and insulating layer being fabricated from amorphous compounds which are constituted either wholly or in part by the same elements.
申请公布号 DE2743641(A1) 申请公布日期 1978.03.30
申请号 DE19772743641 申请日期 1977.09.28
申请人 COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 KUMURDJIAN,PIERRE
分类号 H01L45/00;(IPC1-7):01L21/06 主分类号 H01L45/00
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