| 摘要 |
<p>PURPOSE:To make it possible to add a photodetector for monitoring output light to a distribution feedback type semiconductor light emitting element as a body, by using the corrugation of the distribution feedback type semiconductor light emitting element, which has the corrugation in an active layer, as the secondary corrugation, and providing a slit in an outer region of the corrugation. CONSTITUTION:A slit 12 is formed at a point which is separated by about 100mum from the side of a high reflecting surface in parallel with the high reflecting surface by using a photolithography method so that the width of the slit is about 10 mum. The depth of the slit 12 is specified so as to reach a cap layer 4. One side (side of high reflecting surface) which is isolated by said slit is a light receiving part 14. The other side is a semiconductor light emitting element body. In the light receiving part 14, a positive electrode 1 is converted into a positive electrode 2 of the light receiving part 14. A contact layer 11 and the cap layer 4 are converted into p-type regions 3 of the light receiving part 14. Thus, the light receiving part 14 functions as a photodetector, which receiving leaking light having intensity proportional to the intensity of laser light. The light receiving part 14 can be used as a monitor.</p> |
