| 摘要 |
PURPOSE:To obtain a photoresist pattern whose shape is excellent, by performing, after an exposure process of the photoresist, a heat treatment of two stages which comprises a normal pressure state and a reduced pressure state, and then proceeding to a developing process. CONSTITUTION:A positive photoresist 2 is formed on a body 1 to be etched and after prebaking, exposed to ultraviolet ray so that a photoresist pattern 5 is formed by applying a photomask 3. Between a process for exposing the photoresist and a process for developing, a process is arranged wherein the photoresist 2 is firstly subjected to a heat treatment under a normal pressure and then subjected to a heat treatment under a reduced pressure. This heat treatment increases concentration diffusion as the result of vaporization, and moves solvent particles in the vertical direction. Along with that, reaction material and sensitized material also are moved in the vertical direction. Thus the vertical distribution of the reaction material and the sensitized material in the photoresist 2 exposed in the form of a standing wave is made uniform, so that a photoresist pattern of excellent shape can be formed. |
