| 摘要 |
PURPOSE:To enable a high-speed operation by forming an insulating film having a dielectric constant higher than a silicon oxide film in part of the Schottky barrier diode (SBD) of the memory cell section, and adding a capacity CSIN due to insulating film in parallel with the SBD capacity, thereby enhancing the degree of integration and the reliability. CONSTITUTION:Leaving a silicon nitride film 18 in part of an SBD 9a, the remainder is etched away. And arsenic is implanted into the part becoming an emitter region, a heat treatment is implemented to form a N<+> layer, and thereafter the formation is performed according to the prior art process. Since in a semiconductor memory device consisting of such construction, a MIS capacity CSIN due to the silicon nitride film 18 is placed in parallel with the SBD 9a of the memory cell, the total capacity C becomes large, so it will be strongly resistant to the information reversal of the memory cell due to alpha-rays or the like. Further, since CSIN is not placed in the peripheral circuit part, the parasitic capacity does not increase. As the insulating film 18 having a dielectric constant higher than a silicon oxide film is formed in part of the SBD and the capacity CSIN due to the insulating film 18 is added in parallel with this SBD, the reliability can be improved without reducing the degree of integration and the operation speed. |
