| 摘要 |
PURPOSE:To enable an element to be decreased in area while maintaining a certain gate length and to provide a semiconductor device resistive to a short- channel effect, having a small area and still having improved current driving capacity, by forming gate electrodes on the side walls of island-shaped semiconductor regions. CONSTITUTION:A semiconductor device according to the present invention comprises a p-type silicon substrate 1, a plurality of island-shaped p-type silicon regions 6 formed on the substrate 1 and each having a side length of S and a height of L, gate oxide films 2 formed on the side walls of said island-shaped p-type silicon regions, gate electrodes 3 of polycrystalline silicon doped with phosphorus formed on said oxide films, sources 4 of n<+> type diffused layers formed on the surface of the p-type silicon substrate 1 and drains 6 of n<+> type diffused layers formed on the surface of the island-shaped p-type silicon regions 6. The island-shaped p-type silicon regions 6 are aligned with a space of V. The distance V and the thickness T of the gate electrode 3 are controlled so as to meet V<2T. The gate length is determined by the height L of the island-shaped p-type silicon regions 6.
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