| 摘要 |
PURPOSE:To form a barrier metallic layer in thinner film thickness by continuously applying a barrier metal after applying a metallic layer for a leading-out electrode and shaping the predetermined lead-out electrode through a photoetching method. CONSTITUTION:An insulating film 2 is formed onto a semiconductor substrate 1, a metallic layer 3 for shaping a lead-out electrode consisting of a metal such as aluminum is applied onto the insulating film 2, and a barrier metal 4 is applied onto the metallic layer 3. The barrier metal 4 may be thinned in thickness such as approximately 0.1mum, and a photo-resist layer 5 is shaped selectively in a lead-out electrode region on the barrier metal 4. The barrier metal 4 and the metallic layer 3 for forming the lead-out electrode 4a are etched in succession, using the photo-resist layer 5 as a mask, and the photo-resist 5 is removed, and the lead-out electrode 4a, to the upper layer of which the barrier metal 4 is shaped, is formed. Accordingly, the barrier metallic layer is shaped immediately after the metal for the lead-out electrode is applied, thus thinning film thickness.
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