| 摘要 |
PURPOSE:To assure withstand voltage, and prevent the crosstalk of a signal between devices, by forming the lowest insulative film by a CVD method, and making a semiconductor layer formed on the insulative film serve as a shield layer. CONSTITUTION:An insulative film 9 is formed, a polycrystalline or amorphous semiconductor layer 10 is formed thereon, and a thermaloxidized film 11 is formed on the surface of the semiconductor layer 10 by applying thermal oxidation to the semiconductor layer 10. A recrystallized semiconductor layer 13 is formed on the thermaloxidized film 11, and a semiconductor device is formed on the recrystallized semiconductor layer 13. The SiO2 film 9 is formed in such a manner by a CVD method, so that a thick SiO2 film for which a high withstand voltage is required can be formed in a short time. The polycrystalline Si film 10 satisfies a shielding function, which prevents the crosstalk of a signal between a device formed on the recrystallized p-type Si layer 13 on the upper part of the polycrystalline sillicon film 10 and a device formed on a substrate 8.
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