N+ AMORPHOUS SILICON THIN FILM TRANSISTORS FOR MATRIX ADDRESSED LIQUID CRYSTAL DISPLAYS

摘要

A thin film FET switching element, particularly useful in liquid crystal displays (LCDs) employs particular materials and is fabricated via a particular process to ensure chemical compatibility and the formation of good electrical contact to an amorphous silicon layer while also producing FETs with desirable electrical properties for LCDs. These materials include the use of titanium as a gate electrode material and the use of N+ amorphous silicon as a material to enhance electrical contact between molybdenum source and drain pads and an underlying layer of amorphous silicon. The process of the present invention provides enhanced fabrication yield and device performance.