| 摘要 |
PURPOSE:To uniformly keep a melt temperature and grow high-quality single crystal silicon having uniform physical properties, by using a crucible placed in a specific susceptor through a cushioning material. CONSTITUTION:A cushioning material 21 consisting of carbon fibers, etc., is uniformly placed in the interior of a susceptor 22, having a larger shape than a crucible 11 and similar thereto and constituted of a deep dish form without forming a slit and the crucible 11 is placed in the interior thereof through the cushioning material 21. The resultant assembly is then placed on a rotating table 14 provided between heaters 13 to construct a crystal growth apparatus. A raw material melt is then put in the crucible 11 and heated with the heaters 13 while being rotated to pull up and grow a crystal.
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