| 摘要 |
PURPOSE:To obtain a homogenous high-quality single crystal of e.g. silicon without crystal defects etc. with a small He loss at a low cost, by pulling up a crystal while applying a horizontal magnetic field with a pair of coils dipped in liquid He in a vertically movable cryostat. CONSTITUTION:A melt 1 consisting of a substance having electric conductivity, e.g. silicon is contained in a crucible 3 provided on a frame 2 under a chamber 9 and pulled up at a given speed while being rotated through a seed crystal 6 supported by a pulling up mechanism 5 and heated with a heater 4 to grow a single crystal 8. On the other hand, a cryostat 13 is simultaneously supported by supports 16 around the chamber 9 and set in a vertically movable manner provided through the vertical shafts 14 and a driving machine 15, and a DC horizontal magnetic field is applied to a pair of superconductive coils 11 dipped in liquid He 12 contained in the cryostat 13 through a DC electric power source to product magnetic viscosity in the melt 1. Thereby heat convection 10 in the melt 1 is suppressed to stably grow a crystal. The cryostat 13 is lowered in the cases of taking out the resultant single crystal, exchanging the crucible 3, etc., to readily carry out these operations. |
