发明名称 |
Gallium arsenide on gallium indium arsenide Schottky barrier device |
摘要 |
Useful field effect transistors can be made with gallium indium arsenide as the electron conducting layer (channel layer) by incorporating a layer of gallium arsenide for the Schottky barrier. Relatively thick gallium arsenide layers are used to achieve low reverse leakage currents.
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申请公布号 |
US4745447(A) |
申请公布日期 |
1988.05.17 |
申请号 |
US19850745294 |
申请日期 |
1985.06.14 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
CHEN, CHUNG Y.;CHO, ALFRED Y.;CHU, SUNG-NEE G. |
分类号 |
H01L27/095;H01L29/201;H01L29/43;H01L29/47;H01L29/80;H01S5/00;H01S5/026;(IPC1-7):H01L29/201;H01L29/56 |
主分类号 |
H01L27/095 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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