Integrated electronics suitable for optical communications

摘要

High gain MESFETs, integratable with a photodetector for optical communications, result from a specific gate structure. In particular, a dielectric region, such as an undoped indium aluminum arsenide region overlaid by a thin aluminum oxide region, is employed. This gate combination with, for example, an n-type indium gallium arsenide active channel yields transconductances as high as 130 mS/mm.