| 发明名称 |
Semiconductor laser device with a diffraction grating |
| 摘要 |
A semiconductor laser device comprising a GaAlAs first cladding layer, a Ga1-xAlxAs (0</=x</=0.4) active layer for laser oscillation, an In1-yGayP1-zAsz (z=2.04y-1.04, and 0</=z</=1) optical guiding layer with a diffraction grating thereon, a GaAlAs buffer layer disposed between said active layer and said optical guiding layer, and a GaAlAs second cladding layer, the width of the forbidden band of said buffer layer being greater than that of the active layer and smaller than that of the optical guiding layer.
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| 申请公布号 |
US4745616(A) |
申请公布日期 |
1988.05.17 |
| 申请号 |
US19860830864 |
申请日期 |
1986.02.19 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KANEIWA, SHINJI;TAKIGUCHI, HARUHISA;YOSHIDA, TOSHIHIKO;MATSUI, SADAYOSHI |
| 分类号 |
H01S5/00;H01S5/12;(IPC1-7):H01S3/19 |
主分类号 |
H01S5/00 |
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