发明名称 |
Extremely-high frequency semiconductor oscillator using transit time negative resistance diode |
摘要 |
An extremely-high frequency semiconductor oscillator which produces a large but substantially noise-free output power with minimized fluctuation of output power for changes in device temperature is realized by using, as its power producing component, a semiconductor transit time diode having a frequency-dependent negative resistance mounted in a cavity resonator of a wave guide means provided with a tuning short at one side of the waveguide means and being designed to perform carrier injection by a combination of tunnel and avalanche phenomena.
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申请公布号 |
US4745374(A) |
申请公布日期 |
1988.05.17 |
申请号 |
US19860875095 |
申请日期 |
1986.06.17 |
申请人 |
ZAIDAN HOJIN HANDOTAI KENKYU SHINKOKAI |
发明人 |
NISHIZAWA, JUN-ICHI;MOTOYA, KAORU |
分类号 |
H03B7/14;H03B1/00;H03B7/06;H03B7/08;H03B9/12;H03B9/14;(IPC1-7):H03B7/14 |
主分类号 |
H03B7/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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