| 摘要 |
PURPOSE:To increase the number of processings per unit time by a method wherein multiple mutually independent substrate heat retaining mechanisms are arranged in a growing chamber while the second molecular beam source is provided exclusively for thermal cracking/removal of an oxide film on the surface of substrate before epitaxial crystal growing process. CONSTITUTION:An exclusive molecular beam source for thermal cracking/ removal process of a natural oxide film on the surface of a substrate 6 is arranged separately from multiple independent substrate heat retaining mechanisms 5 and the other molecular beam sources 3, 4 for the epitaxial crystal growing process. Resultantly, the epitaxial crystal growing process as well as the thermal cracking/removal process of natural oxide film on the surface of substrate can be performed simultaneously although said two processes have been unable to be performed simultaneously by conventional molecular beam epitaxial manufacturing devices. Through these procedures, the number of epitaxial crystal growths per unit time can be increased notably to improve the throughput of device markedly.
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