| 摘要 |
PURPOSE:To suppress decrease in reliability within a semiconductor due to generation of detects such as crack of an insulating film by forming an oxide film or a nitride film on the surface of wiring and a SOG (spin on glass) film for flattening the shape of a section such as a stepped portion of wiring of a contact hole to the insulating film surface or to the surface of an oxide film or a nitride film. CONSTITUTION:A contact hole 3 is formed by etching the determined portion of insulating film 2 formed on the surface of silicon substrate 1. Next, an aluminum film 4 is formed to the surface of insulating film 2 and the contact hole 3 and an aluminum wiring 40 is formed by selectively etching the aluminum film 4. Thereafter, when the surface of aluminum wiring 40 is oxidized by the plasma processing under the oxygen gas atmosphere, a dense aluminum oxide film 9 is easily and economically formed in the thickness of 100-1000Angstrom on the surface of aluminum wiring 40. Next, the SOG film 81 is formed by coating the surface of insulating film 2 and aluminum oxide film 9 with the SOG solution and baking the surface thereof.
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