| 摘要 |
PURPOSE:To obtain a very stable MISFET by a method wherein oxygen gas or hydrogen oxide is adsorbed and fixed on an Si surface, then such hydrogenerated Si gas as monosilane is adsorbed and fixed and an SiO2 film is formed on the Si surface by repeating this operation. CONSTITUTION:An Si single crystal wafer is put in a high-vacuum container to obtain a clean surface by an argon ion sputtering method. When vapor gas is adsorbed on this clean Si surface, an OH group is adsorbed only one layer and when a rise in temperature of 400 deg.C or thereabouts or such an addition of energy as ultraviolet irradiation is performed, an SiO2 monomolecular layer is fixed on the Si wafer surface. Then, SiH4 gas is adsorbed on the previous- stage monomolecular SiO2 surface and fixed adding an energy and moreover the first operation is repeated. In this way, an insulating film of an SiO2 film or the like can be formed by a method wherein the SiO2 film is laminatedly formed in every one molecular layer, the so-called molecular layer epitaxial method.
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