发明名称 BAKING METHOD FOR RESIST
摘要 PURPOSE:To enable the heating to a desired temperature for a short time for only a part too close to a boundary surface between a resist and a substrate, by effectively radiating laser rays on this boundary surface. CONSTITUTION:Laser beams emitted from a laser beam source 1 are made to pass through a lens system 2 and reflected on a vibrating mirror 3 and radiated on a surface of a substrate 5 coated with a resist 4. Then, the laser beams are focused by a lens system 2 so that a focusing point comes too close to a boundary surface between the resist 4 and the substrate 5. while the beams are vibrated with a full swing angle in the X direction of the substrate by the vibrating mirror 3, the surface of the substrate 5 is uniformly scanned with laser beams by moving a XY table 6, on which the substrate 5 is mounted, in the Y direction synchronously with the vibration in the X direction, so that the surface of the substrate is uniformly heated. Hence, the part of the boundary surface between the resist and the substrate can be heated limitedly to a desired temperature for a short time.
申请公布号 JPS63110724(A) 申请公布日期 1988.05.16
申请号 JP19860258912 申请日期 1986.10.29
申请人 NEC CORP 发明人 NAKAMURA SHINICHI
分类号 G03F7/40;G03F7/20;G03F7/26;G03F7/38;H01L21/027 主分类号 G03F7/40
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