| 摘要 |
PURPOSE:To enable the growth of an epitaxial layer of high purity, by keeping the whole reaction system in a state of low temperature and radiating light from outside on only a group III metal. CONSTITUTION:When infrared light 11 is radiated on a group III metal 2, for example, only the group III metal 2 can be locally heated. Therefore, while such a temperature profile that a growth temperature is kept low is formed in an electric furnace 9, the light 11 is radiated on only the growth III metal 2, and the group III metal 2 is heated to a high temperature, so that a temperature profile that the growth temperature is lowered can be easily realized. Thus, even at a low temperature at which there are less effect of impurity diffusion from a substrate 8 and Si contamination, a gettering effect can be effectively utilized by irradiating the group III metal with light in order to raise its temperature, so that the growth of an epitaxial layer of high purity can be enabled.
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