| 摘要 |
PURPOSE:To enable the detection of three components of force in the highest state of piezo-resistance effect by a method wherein a plurality of detecting elements are formed in the directions of the perpendicularly intersecting X and Y axes and connected by bridging respectively and other detecting elements are formed in juxtaposition at least in either an X axis direction or Y axis direction and connected by bridging in different disposition from that of the aforesaid detecting elements. CONSTITUTION:Twelve detecting elements 8 are formed on a detecting surface 7 by using a silicon planar process technique. The resistivity of the detecting elements 8 changes when their shape changes, and in the case when a flat-plate- shaped strain generating body 1 is an n-Si (110) wafer, the detecting elements 8 of RX1, RX2, RX3, RX4 and RY1, RY2, RY3, RY4 are disposed in the direction of <110> (X axis and Y axis), while the detecting elements 8 of RZ1, RZ2, RZ3, RZ4 are disposed in juxtaposition in the direction of the X axis parallel to the detecting elements 8 of RX1, RX2, RX3, RX4. As for forces acting on a force transmitting body 4, six components of forces along the directions X, Y and Z and a moment around each axis act thereon, and a bridge circuit for detecting three components Fz, Mx and My out of them is formed.
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