摘要 |
PURPOSE:To prevent a light from reaching the part other than a picture element part directly under the aperture of a light shielding film as far as possible and reduce smear without degrading a sensitivity by covering the upper surface of the picture element part, the end surface of the transfer electrodes and the upper surface of the transfer electrodes of a semiconductor substrate with the light shielding film with slight gaps. CONSTITUTION:A light shielding film 11 is composed of a horizontal part 13 which covers the upper surface of 2nd transfer electrode 7 with a little gap and a vertical part 14 which covers the end parts of 1st transfer electrode 6 and the 2nd transfer electrode 7 with little gaps. The light shielding film 11 is provided immediately above a semiconductor substrate 1 with a gap of, for instance, about 1 mum. Therefore, a light passing through the aperture 10 of the light shielding film 9 mostly reaches an N-type region 3 for a light sensitive picture element and almost no light reaches the other part. With this constitution, an optoelectric conversion phenomenon created in the part other than the N-type region 3 can be suppressed to the utmost. |