| 摘要 |
PURPOSE:To measure the pressure sensitivity by using an electrode that is formed at the surface by placing a wafer on a wafer stage, thereby sucking a diaphragm under vacuum from the rear of a semiconductor pressure sensor by utilizing holes mounted at a wafer stage. CONSTITUTION:An electrical measurement is carried out from the surface of a semiconductor pressure sensor 1 and a pressure is applied from the rear of the semiconductor pressure sensor 1, so that the pressure sensitivity of the sensor 1 is measured in a wafer process. Thus, when the wafer 5 is placed on a wafer stage 2 and recessed parts 15 that are prepared at the rear side of the semiconductor sensor 1 are sucked under vacuum by utilizing through holes 3, a negative pressure equivalent to a stage of pressure that is applied from the surface to the recessed parts 15 of the semiconductor pressure sensor 1 is developed. Then a diaphragm 16 is deformed in the same manner that is deformed in the case where the pressure is applied from the surface side, so that is state of diaphragm makes it possible to measure the pressure sensitivity.
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