| 摘要 |
PURPOSE:To enable rugged substrate to be impurity-diffused by a method wherein substrates to be diffused opposing to silicon substrates with coating diffusion source sintered thereon are juxtaposed with one another while respective substrates are heated by an encircling heater up to specified temperature to diffuse impurity on the substrate to be diffused. CONSTITUTION:Silicon substrates 1 with coating diffusion source 2 sintered thereon as well as the other substrates 3 with deep grooves cut therein opposing to the substrates 1 are juxtaposed with one another on a quartz susceptor 4. The quartz susceptor 4 is provided with a quartz furnace core tube 6 encircled by a resistor heater 5 to be heated. The Si substrates 1 with coating diffusion source 2 containing As sintered thereon opposing to the silicon substrates 3 are inserted into the quartz furnace core tube 6. At this time, mixed gas of N2, O2 is fed from a gas leading-in port 7 to perform the diffusion process. Through these procedures, rugged sides and bottom part of rugged substrates to be diffused can be diffused evenly.
|
