| 摘要 |
PURPOSE:To prevent the generation of microcrack even when a pressure is applied to an interlayer insulating film on the occasion of mounting a bump and the generation of leak current between a pad, and conductive material through the interlayer insulating film, and assure reliable insulation by defining thickness of a protection insulating film. CONSTITUTION:A first aluminum wiring layer 3 is formed on a semiconductor substrate 1 through a first interlayer insulating film 2, a pad 5 of a second aluminum wiring layer is formed on the wiring layer 3 through a second interlayer insulating film 4 and moreover a bump 6 consisting of solder is formed on this pad 5. A protection insulating film 7 is formed in the thickness of 500-2000Angstrom on the upper most layer except for the region of bump 6. Moreover, the substrate 1 is electrically connected to the wiring layer 3 through the contact hole 8 formed on the interlayer insulating film 2. The stress generated on the protection insulating film 7 and interlayer insulating film 4 can be lowered by forming the protection insulating film 7 in the thickness of 500-2000Angstrom on the upper most layer of elements.
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