| 摘要 |
PURPOSE:To enable control of film thickness with such precision of layers of several to several ten molecules, by piling a group III material of a III-V compound semiconductor on a crystal material of a III-V compound semiconductor substrate so that a laminar state is formed and next making hydride of a group V element be introduced while radiating light on the layer of the group III material and performing a surface reaction of the group V element to the preceding group III element piled by the photochemical reaction. CONSTITUTION:The amount corresponding to layers of several to several ten molecules of, e.g., Ga is piled in a laminar state on a GaAs substrate crystal material by means of hydrogen reduction and thermal decomposition of alkyl gallium, or evaporation of Ga, concurrently by means of ultraviolet-ray irradiation. Next, e.g., arsine which is a hydride of arsenic is introduced on the Ga piled layer so that a reaction of Ga to AsH3 is performed concurrently with the ultraviolet-ray irradiation and a III-V compound semiconductor made of GaAs or the like is obtained.
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