| 摘要 |
A heterojunction p-i-n photovoltaic cell having at least three different semiconductor layers formed of at least four different elements comprises a p-type relatively wide band gap semiconductor layer (12), a high resistivity intrinsic semiconductor layer (14), used as an absorber of light radiation, and an n-type relatively wide band gap semiconductor layer (16). The intrinsic layer is in electrically conductive contact on one side with the p-type layer and on an opposite side with the n-type layer. First (20) and second (22) ohmic contacts are in electrically conductive contact with the p-type layer and the n-type layer, respectively. |
