| 摘要 |
PURPOSE:To prevent defective goods from being generated, by forming gettering regions on the periphery of a one-sided main surface of a semiconductor substrate, exclusive of the element disposal formation part, and besides on the other-sided surface of the substrate. CONSTITUTION:Gettering regions 3 such as phosphorous diffusion regions are formed on the periphery of a one-sided main surface 1a exclusive of an element disposal formation parts 5 of a semiconductor substrate 1, shown in slant lines, and besides on the main surface 1b on the side opposite to the main surface 1a of the substrate 1, that is, on the rear. Next, before or after the formation of these gettering regions 3, simple semiconductor devices or semiconductor devices such as semiconductor integrated circuits are disposed/formed on the element disposal formation part 5 of the main surface 1a of the semiconductor device. Next, metals such as Fe, Cu, Au, Ni, etc. are absorbed to e.g., phosphorus as an impurity in the gettering region 3 so that a gettering process is performed. Hence, defective goods can be prevented from being generated in the semiconductor device.
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