| 摘要 |
PURPOSE:To reduce the depths of electrode windows and improve the step coverage of wirings for the electrode windows, the flatness, and the reliability of a semiconductor device by a method wherein, in a MOS-IC, the surfaces of the parts of a semiconductor substrate which are contact with the electrode windows through which source/ drain regions are lead out are made to protrude to the positions higher than the surfaces of the parts of channel regions. CONSTITUTION:Protruding parts 1b are provided at the parts of a substrate 1a which are contacted with electrode windows 6 and the upper surfaces of the protruding parts 1b are formed at the positions higher than the surfaces of the parts of channel regions 3 by about 0.3 mum and upgrade slopes are formed between the protruding parts 1b and the surfaces of the parts of the channel regions 3. Source/drain regions 2 are lead out through the electrode windows 6 and the portions of the source/drain regions 2 from the neighborhoods of the channel regions 3 to the protruding parts 1b are formed along the slopes. As the upper surfaces of the protruding parts 1b are higher than the substrate surfaces of the parts of the channel regions 3, the partial thicknesses of an insulating film 5 above the parts where the electrode windows 6 are formed are smaller than the thicknesses of the conventional constitution and the depths of the electrode windows 6 are reduced compared to the depths of the conventional constitution.
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