| 摘要 |
PURPOSE:To reduce the steps of manufacturing a semiconductor thereby to improve patterning accuracy by forming an interelement separating oxide film on the sidewall and the bottom of a groove on the surface of a semiconductor substrate except a groove digging region by one patterning mask and one oxidizing step. CONSTITUTION:The surface of a semiconductor substrate 1 is covered with a mask material of groove digging etching except the groove digging region. A silicon oxide film 5 and the sidewall of the groove are masked by a frame of a silicon oxide film 7 fored by anisotropically etching, and only the oxide mask 2 in the bottom of the groove is removed. The surface of the substrate 1 except the groove digging region is separately oxidized, and the film 2 to become an oxidation mask of separate oxidation of the sidemall of the groove is simultaneously patterned through a photocomposing step using a multilayer resist. When a first layer resist 6 of the multilayer resist is removed and separately oxidized, elements are separated completely between the elements.
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