| 摘要 |
PURPOSE:To maintain a wafer and liquid at even temperature thereby to grow a crystal of high quality without complicated control by bringing both the wafer and the liquid in contact with a holding unit formed of a heat pipe. CONSTITUTION:The temperature difference on the surface of a heat pipe 11 occurs due to the limit of controlling accuracy of a heater 7 and the influence of the heat transfer of a substance, such as refined hydrogen 8 at the time of gradually cooling a crystal growth. In order to compensate the temperature difference, a refrigerant is condensed at the part (A) of the pipe 11, and evaporated at the part (B). This is a heat transfer phenomenon due to phase change, the pipe 11 of the holding unit of a wafer 1 has an operating area even at crystal growing temperature to operate as a heat uniformizing element of the wafer 1 and liquids 3, 4. Accordingly, thermal conductivity observed on the surface of the pipe 11 becomes much larger as compared with a conventional carbon, thereby performing the heat uniformization in an extremely short time. Thus, thermal conductivity is improved to reduce the temperature difference between the wafer and the liquid, thereby obtaining a crystal of high quality.
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