| 摘要 |
PURPOSE:To contrive to remove dust of a submicron level without breaking transistors constituting an integrated circuit by a method wherein pure water containing nonmetallic ions is turned into a jet water current by a pressing unit and a jet nozzle while a wafer is rotated and the jet current is sprayed on the surface of the substrate to clean the surface. CONSTITUTION:Ultrapure water (a) manufactured by an ultrapure water manufacturing unit 1 is transported to a pressing unit 3 through a first piping 2. A branch 4 is provided in the midst of the first piping 2 and this branch 4 is connected to a CO2 container 6, which is used as a non-metallic ion source encapsulated by pressing, through a pressing control valve (pressure control valve) 5. The non-metallic ion-containing ultrapure water pressed by the pressing unit 3 passes through a second piping 7, is transported to a jet nozzle 8 and is jetted through the point of the jet nozzle 8 as a jet water current 10. On the other hand, a wafer 21 with its surface to be cleansed is fixed on the rotating stand 22 by a method of vacuum attraction and so on and the wafer 21 is also rotated by this rotating stand 22. Accordingly, the jet water current 10 is sprayed almost uniformly on the surface of the rotating wafer 21.
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