发明名称 THIN FILM FORMING DEVICE BY MICROWAVE PLASMA
摘要 PURPOSE:To perform cleaning of the titled device without dismantling it and to enhance efficiency thereof by controlling a magnetic field to be impressed and generating electron cyclotron resonance in the vicinity of a window made of a dielectric material and converting a film deposited on the window into the dielectric material. CONSTITUTION:Magnetic fields are impressed to a plasma formation chamber 10 from coils 13, 14 and microwave is introduced through a window 11 made of a dielectric material and plasma of electron cyclotron resonant excitation is generated. A thin film is formed on a base plate 22 set before this plasma. Then the above-mentioned magnetic fields are controlled and the position generating electron cyclotron resonance is shifted to the vicinity of the window 11. The film stuck on the window 11 is oxidized or nitrided and thereby converted into the dielectric material. By the above device, the film stuck on the window 11 is converted into the dielectric material while it is thin and the efficiency of microwave is prevented from being lowered.
申请公布号 JPS63111177(A) 申请公布日期 1988.05.16
申请号 JP19860255718 申请日期 1986.10.29
申请人 HITACHI LTD 发明人 MOCHIZUKI YASUHIRO;MONMA NAOHIRO
分类号 C23C16/12;C23C16/14;C23C16/24;C23C16/50;C23C16/511 主分类号 C23C16/12
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