发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION
摘要 PURPOSE:To obtain the titled composition having high resolution by incorporating a photosensitive material having a specific structure and an alkaline soluble novolak resin to the titled composition. CONSTITUTION:The titled composition contains the photosensitive material having the structure shown by the formula and the alkaline soluble novolak resin. In the formula, D is 1,2-naphthoquinonediazide-t-sulfonyl group or 1,2- naphthoquinone-4-sulfonyl group, R1 and R2 are each alkyl, alkoxy or aralkyl group, etc., (a) and (b) are each an integer of 0-9 satisfying the inter-relationship shown by the formula 9>=(a+b)>=1, (c) and (d) are each an integer of 0-9 satisfying the inter-relationship shown by the formula, 9>=(c+d)>=1, it is preferred that (a+b) is the integer of 2-5, and (c+d) is the integer of 1-4. Thus, the photoresist having high reproducibility of a pattern shape and high sensitivity is obtd.
申请公布号 JPS63110446(A) 申请公布日期 1988.05.14
申请号 JP19860257525 申请日期 1986.10.29
申请人 FUJI PHOTO FILM CO LTD 发明人 UENISHI KAZUYA;KAWABE YASUMASA;KOKUBO TADAYOSHI
分类号 G03C1/72;G03F7/022;H01L21/027;H01L21/30 主分类号 G03C1/72
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