| 摘要 |
PURPOSE:To form an EPROM, which has excellent writing characteristics and is integrated to a high degree, by considering a memory cell-layout when using a memory cell having a form that a control gate and a floating gate are juxtaposed onto a channel region. CONSTITUTION:A first n<+> diffusion region 3 is connected to a common wiring 11 consisting of the same n<+> diffusion layer in a substrate 1. A second n<+> diffusion region 4 is connected to a bit line 10 shaped by a metallic film such as an Al film through a contact hole 9 formed to an insulating film 8 coating the substrate. The bit lines 10 are disposed continuously in the cross direction in the figure, and the second diffusion regions in a plurality of memory cells arranged in the direction are connected in common. A control gate 6 is disposed continuously to a plurality of memory cells arranged in the direction orthogonal to the bit lines 10, and functions as a word line. An oxide film is shaped onto the surface of the gate 6, a polycrystalline Si film is deposited, and the polycrystalline Si film is etched and left only on the side wall section of the gate 6, and isolated at every memory. |
