| 摘要 |
PURPOSE:To enhance dark resistivity and photosensitivity of a photosensitive body in the near infrared region by incorporating Ge and a specified amount of an element of group IIIa of the periodic table in an amorphous silicon carbide layer. CONSTITUTION:The layer 5a made of amorphous silicon carbide (a-SiC) is formed on a substrate 1, and it is composed of a layer region 6a containing Ge uniformly or not uniformly in the layer thickness direction and the element of group IIIa, preferably, more than a layer region 7a, and the layer region 7a containing said element in an amount of 0.1-10,000ppm. C is contained uniformly in both layer regions, or more in either layer regions than the other, thus permitting the obtained photosensitive body to be enhanced in dark resistivity and photosensitivity characteristics, both of a surface layer and a barrier layer to be made substantially unnecessary, and carrier generation efficiency to be also enhanced in the near infrared region. |
