| 摘要 |
PURPOSE:To reduce the dispersion of the characteristics of separate MESFET, and to improve yield by forming a rectifying electrode layer by an amorphous substance mainly comprising Si and P and containing two atomic % or more of P. CONSTITUTION:Be ions are implanted to shape a P-type GaAs layer 2, and the layer 2 is thermally treated in an N2 atmosphere. An Si3N4 film is removed, and an a-Si-P layer 3 is formed through a decompression CVD method. An unnecessary section except a gate region in the a-Si-P layer 3 is gotten rid of through plasma etching using the mixed gas of CF4 and O2. Lastly, a metal such as Al is evaporated, and machined to a predetermined pattern and a metallic electrode 4, a source electrode 5 and a drain electrode 6 are shaped, thus manufacturing a MESFET. Accordingly, high barrier height to the P-type GaAs layer 2 can be acquired. |
