| 摘要 |
PURPOSE:To reduce a current amplification factor without broadening base width, and to increase the speed of write-operation to a cell by adopting a P-N-P transistor. CONSTITUTION:An FF is formed by employing bases 5, 15 and collectors 3, 13 for an n-p-n type transistor, emitters 6, 16 for reading/writing are connected to digit lines 10, 20, and emitters 7, 17 for holding information are connected by a common wiring, and connected to a word bottom line 11. Emitters 8, 18 for a P-N-P transistor are connected to a common word top line 12, thus constituting a memory cell using the P-N-P type transistor as load. High- concentration n-type impurities 9, 19 are shaped selectively in the surface base region 3 in the P-N-P transistor. Accordingly, base resistance is augmented without broadening base width, thus reducing a current amplification factor. |
