| 摘要 |
PURPOSE:To suppress the Barkhausen jump of a magneto-resistance effect element by providing a bias conductor to form plural current paths to form the direction orthogonal to the length-wise direction of the magneto-resistance effect element. CONSTITUTION:A bias conductor 5 is provided in which plural current paths 5a to form the direction orthogonal to the length-wise of a magneto-resistance effect element MR 7 is formed. When the conductor 5 conducted, a current flows from one side path 5b through a current path 5a to other current path 5b in the conductor 5. When the current flows at the current path 5a, at respective electric paths 5a, a bias magnetic field of the same direction as a magnetizing facilitating axis direction of the MR 7 occurs. The bias magnetic field is impressed to the MR 7 and the MR 7 comes to be a single magnetic domain by such a bias magnetic field. Consequently, at the MR 7, the magnetic wall due to a domain structure is eliminated and the Barkhausen jump is suppressed. |
