发明名称 METHOD FOR DEPOSITION OF METAL FOR CATALYST ON INORGANIC CARRIER HAVING PORES
摘要 PURPOSE:To uniformly deposit a catalyst metal by evaporation even into the pores of a porous inorg. carrier by inserting an electrode for impressing an ion acceleration voltage into the carrier at the time of depositing the catalyst metal on the inorg. carrier by a high-frequency ion plating method. CONSTITUTION:A crucible 2 contg. Ni, Pt, Pd, etc., as the catalyst metal 3 is placed in the lower part of a vacuum vessel 1 and the honeycomb-shaped carrier 4 consisting of the porous inorg. material such as alumina is disposed above the same. the electrode 5 having many needle-shaped projections in brought into contact with the inside of the pores of the carrier 4 so that the needle-like projections are vertically movably inserted into the pores of the carrier. Gaseous Ar 11 is introduced into the vacuum vessel 1 and a high-frequency voltage is impressed to a coil 6 by a high-frequency oscillator 9 to generate plasma 14. The catalyst metal 3 in the crucible 2 is melted and evaporated by the projection of an electron beam 7 to form the metal ions having the positive electric charge in the plasma 14. The metal ions are accelerated by the electrode 5 impressed with a negative voltage. The catalyst metal is thus deposited by evaporation uniformly into the alumina carrier 4 and the high-performance catalyst is easily produced.
申请公布号 JPS63109159(A) 申请公布日期 1988.05.13
申请号 JP19860252659 申请日期 1986.10.23
申请人 BABCOCK HITACHI KK 发明人 NOSAKA TADASHI;KURUMACHI TAKAHARU
分类号 C23C14/18;C23C14/24 主分类号 C23C14/18
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