| 摘要 |
PURPOSE:To perform interconnection with high reliability which can perform multilayer interconnection by providing interconnection formed with a separate insulator by ion implanting. CONSTITUTION:An aluminum film 3 is formed on a whole substrate 1 which is diffused, coated with a photoresist 4, and the photoresist 4 on the aluminum film of an ion implanted part 6 is removed by lithography. Oxygen ions are distributed to an entire ion implanted part by stepwisely, continuously varying an acceleration voltage to form a separated insulator 7. The photoresist 4 is removed on the surface after ion implanting, annealed, and a surface protecting film 8 is formed thereon. The entire surface in which a bonding pad 9 is removed is annealed by ion implanting. Since the aluminum compounding method by ion implanting does not extend the insulator more than the oxygen distribution at the time of ion implanting, an interconnection width can be narrowed to the limit of the lithography of the resist.
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