发明名称 |
Magnetic bubble memory device |
摘要 |
A magnetic bubble memory device for implementing its high storage density for practical use is generally composed of ion-implanted elements occupying the most part of a minor loop, and other elements made of soft magnetic materials. The ion-implanted minor loop with a higher density is folded several times, and includes straight propagation tracks adjacent to each other and connected by an inside turn, with another straight propagation track having an outside turn facing the inside turn being placed between the adjacent straight tracks.
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申请公布号 |
US4744051(A) |
申请公布日期 |
1988.05.10 |
申请号 |
US19850752587 |
申请日期 |
1985.07.08 |
申请人 |
HITACHI, LTD. |
发明人 |
SATO, TOSHIHIRO;IKEDA, TADASHI;SUZUKI, RYO;TAKEUCHI, TERUAKI |
分类号 |
G11C19/08;(IPC1-7):G11C19/08 |
主分类号 |
G11C19/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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